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- Dionyz Pogany
TU Wien, Faculty of Electrical Engineering and Information Technology, Vienna, Austria
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Publication search results
found 37 matches
- 2023
- D. Wieland, S. Ofner, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics, Dionyz Pogany, Clemens Ostermaier:
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. IRPS 2023: 1-6 - 2018
- Clemens Ostermaier, Peter Lagger, M. Reiner, Dionyz Pogany:
Review of bias-temperature instabilities at the III-N/dielectric interface. Microelectron. Reliab. 82: 62-83 (2018) - 2017
- Clément Fleury, Guido Notermans, Hans-Martin Ritter, Dionyz Pogany:
TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. Microelectron. Reliab. 76-77: 698-702 (2017) - 2016
- Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - 2015
- Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany:
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55(9-10): 1687-1691 (2015) - Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany:
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectron. Reliab. 55(9-10): 1471-1475 (2015) - Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl:
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63 - Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier:
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. IRPS 2015: 6 - 2013
- Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013) - 2012
- J. Rhayem, B. Besbes, Raul Blecic, Sergey Bychikhin, Georg Haberfehlner, Dionyz Pogany, B. Desoete, Renaud Gillon, Aarnout Wieers, Marnix Tack:
Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices. Microelectron. J. 43(9): 618-623 (2012) - Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany:
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(9-10): 2194-2199 (2012) - Guido Notermans, Sergey Bychikhin, Dionyz Pogany, David Johnsson, Dejan M. Maksimovic:
HMM-TLP correlation for system-efficient ESD design. Microelectron. Reliab. 52(6): 1012-1019 (2012) - Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn:
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52(9-10): 1812-1815 (2012) - 2011
- Helmut Köck, Christian Djelassi, Stefano de Filippis, Robert Illing, Michael Nelhiebel, Markus Ladurner, Michael Glavanovics, Dionyz Pogany:
Improved thermal management of low voltage power devices with optimized bond wire positions. Microelectron. Reliab. 51(9-11): 1913-1918 (2011) - Dionyz Pogany, Sergey Bychikhin, Michael Heer, W. Mamanee, Erich Gornik:
Application of transient interferometric mapping method for ESD and latch-up analysis. Microelectron. Reliab. 51(9-11): 1592-1596 (2011) - 2010
- Sergey Bychikhin, Georg Haberfehlner, J. Rhayem, Daniel Vanderstraeten, Renaud Gillon, Dionyz Pogany:
Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. Microelectron. Reliab. 50(9-11): 1427-1430 (2010) - A. Podgaynaya, Ralf Rudolf, B. Elattari, Dionyz Pogany, Erich Gornik, Matthias Stecher, Marc Strasser:
Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization. Microelectron. Reliab. 50(9-11): 1347-1351 (2010) - 2009
- Georg Haberfehlner, Sergey Bychikhin, Viktor Dubec, Michael Heer, A. Podgaynaya, M. Pfost, Matthias Stecher, Erich Gornik, Dionyz Pogany:
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. Microelectron. Reliab. 49(9-11): 1346-1351 (2009) - Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik, Wolfgang Stadler:
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. Microelectron. Reliab. 49(12): 1455-1464 (2009) - Helmut Köck, Vladimír Kosel, Christian Djelassi, Michael Glavanovics, Dionyz Pogany:
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. Microelectron. Reliab. 49(9-11): 1132-1136 (2009) - 2008
- Michael Heer, P. Grombach, A. Heid, Dionyz Pogany:
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. Microelectron. Reliab. 48(8-9): 1525-1528 (2008) - 2007
- Sergey Bychikhin, T. Swietlik, Tadeusz Suski, Sylwester Porowski, Piotr Perlin, Dionyz Pogany:
Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping. Microelectron. Reliab. 47(9-11): 1649-1652 (2007) - Karol Cico, Ján Kuzmík, Dagmar Gregusová, Roman Stoklas, Tibor Lalinsky, Alexandros G. Georgakilas, Dionyz Pogany, Karol Fröhlich:
Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. Microelectron. Reliab. 47(4-5): 790-793 (2007) - Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Tilo Brodbeck, Wolfgang Stadler:
Backside interferometric methods for localization of ESD-induced leakage current and metal shorts. Microelectron. Reliab. 47(9-11): 1539-1544 (2007) - Michael Heer, Sergey Bychikhin, W. Mamanee, Dionyz Pogany, A. Heid, P. Grombach, M. Klaussner, Winfried Soppa, Bernd Ramler:
Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. Microelectron. Reliab. 47(9-11): 1450-1455 (2007) - 2006
- Michael Heer, Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, M. Frank, A. Konrad, J. Schulz:
Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. Microelectron. Reliab. 46(9-11): 1591-1596 (2006) - 2005
- Michael Heer, Viktor Dubec, M. Blaho, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Marie Denison, Matthias Stecher, Gerhard Groos:
Automated setup for thermal imaging and electrical degradation study of power DMOS devices. Microelectron. Reliab. 45(9-11): 1688-1693 (2005) - Martin Litzenberger, Christoph Furböck, Sergey Bychikhin, Dionyz Pogany, Erich Gornik:
Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices. IEEE Trans. Instrum. Meas. 54(6): 2438-2445 (2005) - 2004
- Sergey Bychikhin, Viktor Dubec, Dionyz Pogany, Erich Gornik, M. Graf, V. Dudek, Winfried Soppa:
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress. Microelectron. Reliab. 44(9-11): 1687-1692 (2004) - Viktor Dubec, Sergey Bychikhin, M. Blaho, Michael Heer, Dionyz Pogany, Marie Denison, Nils Jensen, Matthias Stecher, Gerhard Groos, Erich Gornik:
Multiple-time-instant 2D thermal mapping during a single ESD event. Microelectron. Reliab. 44(9-11): 1793-1798 (2004)
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